Some features of degradation in bipolar transistors at different test conditions for total ionizing dose effect-Reference-Cited by-同舟云学术

Some features of degradation in bipolar transistors at different test conditions for total ionizing dose effect

Published:2012-09 Issue:9-10 Volume:52 Page:2435-2437
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Petrov A.S.,Ulimov V.N.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. ELDRS in bipolar linear circuits: a review;Pease;IEEE Trans Nucl Sci,2009

2. McClure Steven S, Jerry Gorelick L, Candice Yui C, Bernard Rax G, Michael Wiedeman D. Continuing evaluation of bipolar linear devices for total dose bias dependency and ELDRS effects. In: IEEE Radiat Eff Data Workshop; 2003.

3. Bruce Pritchard E, Bernard Rax G, Steven McClure S. Recent radiation test results at JPL. In: IEEE Radiat Eff Data Workshop, 2003. p. 24-33.

4. Johnston AH. Test method for enhanced low dose rate damage (ELDRS) effects in integrated circuits for outer planetary missions. Jet Propulsion Laboratory. JPL D-33339, June 2009.

5. Trends in the total dose response of modern bipolar transistors;Nowlin;IEEE Trans Nucl Sci,1992

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