Remote carrier trapping in FinFETs with ONO buried layer: Temperature effects-Reference-Cited by-同舟云学术

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Remote carrier trapping in FinFETs with ONO buried layer: Temperature effects

Published:2013-03 Issue:3 Volume:53 Page:386-393
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Chang Sung-Jae,Bawedin Maryline,Xiong Wade,Lee Jong-Hyun,Lee Jung-Hee,Cristoloveanu Sorin

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Advanced SOI MOSFETs with buried alumina and ground plane: self-heating and short-channel effects

2. In handbook of semiconductor manufacturing technology;Cristoloveanu,2007

3. Patruno P, Kostrzewa M, Landry K, Xiong W, Cleavelin CR, Hus Che-Hua, et al. In: IEEE international SOI conference. California, USA; 2007.

4. A New 40-nm SONOS Structure Based on Backside Trapping for Nanoscale Memories

5. A Nanoscale Memory and Transistor Using Backside Trapping

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