Author:
Abbate C.,Busatto G.,Iannuzzo F.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Ostling M, Ghandi R, Zetterling C. SiC power devicesPresent status, applications and, future perspective. ISPSD2011. p. 10–5.
2. Failure modes and robustness of SiC JFET transistors under current limiting operations;Bouarroudj-Berkani;Power Electr Appl (EPE 2011),2011
3. Operation of SiC normally-off JFET at the edges of its safe operating area;Abbate;Microelectr Reliab,2011
4. Deckelmann AI, Wachutka G, Hirler F, Krumrey J. UIS-Failure of DMOS Power Transistors. In: Proceeding of the 32nd European on solid-state device research conference; 2002. p. 459–62.
5. Bernoux B, Escoffier R, Jalbaud P, Reynes J-M, Scheid E, Dorkel J-M. Power MOSFET RDSon under repetitive avalanche cycling. ISIE; 2009. p. 2016–19.
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