The impact of device width on the variability of post-irradiation leakage currents in 90 and 65 nm CMOS technologies-Reference-Cited by-同舟云学术

The impact of device width on the variability of post-irradiation leakage currents in 90 and 65 nm CMOS technologies

Published:2012-11 Issue:11 Volume:52 Page:2521-2526
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Rezzak Nadia,Maillard Pierre,Schrimpf Ronald D.,Alles Michael L.,Fleetwood Daniel M.,Li Yanfeng Albert

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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5. The application of RHBD to n-MOSFETs intended for use in cryogenic-temperature radiation environments;Jun;IEEE Trans Nucl Sci,2007

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