Author:
Villamor-Baliarda A.,Vanmeerbeek P.,Riccio M.,d’Alessandro V.,Irace A.,Roig J.,Flores D.,Moens P.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. Saito W et al. A 20mΩcm2 600 V-class super junction MOSFET. In: Proc ISPSD’04; 2004. p. 459–62.
2. Auerbach F, Deboy G, Weber H. Compensation component with improved robustness. US Patent 6,633,064 B2; 2003.
3. Sridevan S. Super junction device with improved ruggedness. US Patent 7,166,890 B2; 2007.
4. Ono S et al. Design concept of n-buffer layer (n-bottom assist layer) for 600 V-class super junction MOSFET. In: Proc ISPSD’07; 2007. p. 25–28.
5. Soo-Seong K, Kwang-Hoon O, Young-Chul K, Chong-Man Y. Degradation of avalanche ruggedness of power diodes by thermally induced local breakdown. In: Proc PESC’06; 2006. p. 1–5.
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献