Is the power-law model applicable beyond the direct tunneling regime?-Reference-Cited by-同舟云学术

Is the power-law model applicable beyond the direct tunneling regime?

Published:2005-12 Issue:12 Volume:45 Page:1861-1867
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Duschl Rainer,Vollertsen Rolf-Peter

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Method of determining reliability screens for time-dependent dielectric breakdown;Crook;IEEE Int Reliab Phys Symp,1979

2. Low field time-dependent dielectric integrity;Anolick;IEEE Int Reliab Phys Symp,1979

3. Acceleration factors for thin gate oxide stressing;McPherson;IEEE Int Reliab Phys Symp,1985

4. A quantitative physical model for time-dependent breakdown in SiO2;Chen;IEEE Int Reliab Phys Symp,1985

5. Hole injection oxide breakdown model for very low voltage lifetime extrapolation;Schuegraf;IEEE Int Reliab Phys Symp,1993

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