1. Wu, E.Y. et al., A comprehensive investigation of gate oxide breakdown of p þ poly=pFETs under inversion mode, inIEEE International Electron Devices Meeting Technical Digest, The Institute of Electrical and Electronics Engineers, Piscataway, NY, 2005, 407.
2. Kaczer, B. et al., Implications of progressive wear-out for lifetime extrapolations of ultra-thin (EOT $1 nm) SiON films, inIEEE International Electron Devices Meeting Technical Digest, The Institute of Electrical and Electronics Engineers, Piscataway, NY, 2004, 713.
3. On the breakdown statistics of very thin SiO2 films
4. A model relating wearout to breakdown in thin oxides
5. Current limited stresses of SiO/sub 2/ gate oxides with conductive atomic force microscope