Study of proton radiation effect to row hammer fault in DDR4 SDRAMs

Author:

Lim ChulseungORCID,Park Kyungbae,Bak Geunyong,Yun DonghyukORCID,Park MyungsangORCID,Baeg Sanghyeon,Wen Shi-Jie,Wong Richard

Funder

MOTIE

KSRC

NRF

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. DDR3 SDRAM Specification, JEDEC Standard JESD79-3E,2010

2. DDR4 SDRAM, JEDEC Standard JESD79-4,2012

3. Soft error trends and mitigation techniques in memory devices;Slayman,2011

4. Flipping bits in memory without accessing them: an experimental study of DRAM disturbance errors;Kim,2014

5. Architectural support for mitigating row hammering in DRAM memories;Kim;IEEE Comput. Archit. Lett.,2014

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Revisiting row hammer: A deep dive into understanding and resolving the issue;Microelectronics Reliability;2024-09

2. Read Disturbance in High Bandwidth Memory: A Detailed Experimental Study on HBM2 DRAM Chips;2024 54th Annual IEEE/IFIP International Conference on Dependable Systems and Networks (DSN);2024-06-24

3. Spatial Variation-Aware Read Disturbance Defenses: Experimental Analysis of Real DRAM Chips and Implications on Future Solutions;2024 IEEE International Symposium on High-Performance Computer Architecture (HPCA);2024-03-02

4. An Experimental Analysis of RowHammer in HBM2 DRAM Chips;2023 53rd Annual IEEE/IFIP International Conference on Dependable Systems and Networks - Supplemental Volume (DSN-S);2023-06

5. Estimation of the Trap Energy Characteristics of Row Hammer-Affected Cells in Gamma-Irradiated DDR4 DRAM;IEEE Transactions on Nuclear Science;2022-03

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