Relation between UIS withstanding capability and I-V characteristics in high-voltage GaN-HEMTs-Reference-Cited by-同舟云学术

Relation between UIS withstanding capability and I-V characteristics in high-voltage GaN-HEMTs

Published:2017-09 Issue: Volume:76-77 Page:309-313
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Saito W.^ORCID,Naka T.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference14 articles.

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4. Dynamics of power MOSFET switching under unclamped inductive loading conditions;Fischer;IEEE Trans. Electron Devices,1996

5. Off-state degradation of AlGaN/GaN power HEMTs: experimental demonstration of time-dependent drain-source breakdown;Meneghini;IEEE Trans. Electron Devices,2014

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