The total ionizing dose response of a DSOI 4Kb SRAM-Reference-Cited by-同舟云学术

The total ionizing dose response of a DSOI 4Kb SRAM

Published:2017-09 Issue: Volume:76-77 Page:714-718
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Li B.,Wu J.,Gao J.,Kuang Y.,Li J.,Zhao X.,Zhao K.,Han Z.,Luo J.

Funder

National Natural Science Foundation of China

National Key Laboratory of Animal Nutrition

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference13 articles.

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3. Radiation hardness evaluations of 65nm FD-SOI and bulk processes by measuring SET pulse widths and SEU rates;Sonezaki,2014

4. Bulk and FDSOI SRAM resiliency to radiation effects;Calienes,2014

5. Improvement of total-dose irradiation hardness of SOI materials by modifying the buried oxide layer with ion implantation;Zhang;Chin. Phys.,2006

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