Statistical simulation of random dopant induced threshold voltage fluctuations for 35nm channel length MOSFET-Reference-Cited by-同舟云学术

Statistical simulation of random dopant induced threshold voltage fluctuations for 35nm channel length MOSFET

Published:2008-08 Issue:8-9 Volume:48 Page:1572-1575
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Kovac Urban,Reid Dave,Millar Campbell,Roy Gareth,Roy Scott,Asenov Asen

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. International Technology Roadmap for Semiconductors. .

2. Impact of intrinsic parameter fluctuations in decanano MOSFETs on yield and functionality of SRAM cells;Cheng;Solid State Electron,2005

3. Simulation of intrinsic parameter fluctuations in decananometre and nanometre scale MOSFETs;Asenov;IEEE Trans Electron Dev,2003

4. Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFETs;Mizuno;IEEE Trans Electron Dev,1994

5. Stolk PA, Klaasen DBM. The effect of statistical dopant fluctuations on MOS device performance. In: IEDM Tech Dig; 1996. p. 627–30.

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Random Dopant Fluctuation (RDF);Variation-Aware Advanced CMOS Devices and SRAM;2016

2. On system reliability approaches: a brief survey;International Journal of System Assurance Engineering and Management;2013-05-17

3. Impact of Random Dopant Fluctuations on the Timing Characteristics of Flip-Flops;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2012-01

4. Devices and Input Vectors are Shaping von Neumann Multiplexing;IEEE Transactions on Nanotechnology;2011-05

5. Optimization of on-chip link performance under area, power and variability constraints;2010 International Conference on Microelectronics;2010-12