1. Non-destructive high temperature characterisation of high voltage IGBTs;Busatto;Microelectron Reliab,2002
2. Busatto G, Abbate C, Cascone B, Manzo R, Fratelli L, Giannini G, et al. Characterisation of high-voltage IGBT modules at high temperature and high currents. In: PEDS Conference, Singapore; 2003.
3. Modern power devices;Baliga,1987
4. Yun C, Ciappa M, Malberti P, Fichtner W. Thermal component model for electro-thermal analysis of IGBT module systems. Accepted for presentation at the IEEE 2nd International Workshop on chip-package co-design (CPD 2000).
5. Reverse-bias safe operation area of large area MCT and IGBT;Liu;Solid State Electron,2003