Reverse-bias safe operation area of large area MCT and IGBT

Author:

Liu Yin,You Budong,Huang Alex Q

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. You B. Investigation of MOS-gated thyristors and power diodes, Ph.D dissertation, 2000

2. Afridi K, Kassakian J. Turn-off failures in individual and paralleled MCTs. Proc. ISPSD 1993. p. 60–5

3. Lendenmans H, Dettmer H, Krumbein U, Fichtner W. Approaching homogeneous switching of MCT devices: experiment and simulation. Proc. ISPSD 1993. p. 66–70

4. Lendenmans H, Fichtner W. Turn-off failure mechanisms in large (2.2 kV, 20 A) MCT devices. Proc. ISPSD 1994. p. 207–12

5. Dettmer H, Lendenmans H, Burgler J, Muller S, Fichtner W. Turn-off behavior of structured MCT cells. Proc. EPE-MADEP, 1991. p. 258–61

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