Evaluation of RF electrostatic discharge (ESD) protection in 0.18-μm CMOS technology-Reference-Cited by-同舟云学术

Evaluation of RF electrostatic discharge (ESD) protection in 0.18-μm CMOS technology

Published:2008-07 Issue:7 Volume:48 Page:995-999
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Du Xiaoyang,Dong Shurong,Han Yan,Liou Juin J.,Huo Mingxu,Li You,Cui Qiang,Huang Dahai,Wang Demiao

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Wang AZ, Feng HG, Zhan RY, Chen G, Wu Q. ESD protection design for RF integrated circuits: new challenges. In: Custom integrated circuits conference; 2002. p. 411–8.

2. Rosenbaum E, Hyvonen S. On-chip ESD protection for RF I/Os: devices, circuits and models. In: IEEE international symposium on circuits and systems; 2005. p. 1202–5.

3. A review on RF ESD protection design;Wang;IEEE Trans Electron Dev,2005

4. Natarajan MI, Thijs S, Jansen P, Tremouilles D, Jeamsaksiri W, et al. RF CMOS ESD protection and reliability. In: Symposium of physical and failure analysis of integrated circuits; 2005. p. 59–66.

5. Guang C, Wang A. Evaluating RF ESD protection design: an overview. In: Symposium of physical and failure analysis of integrated circuits; 2004. p. 205–8.

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