Author:
Croes K.,Cannatá G.,Zhao L.,Tőkei Zs.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Barrier integrity and reliability in copper low-k interconnects;Tőkei;ISTC,2005
2. Simple model for time-dependent dielectric breakdown in inter- and intralevel low-k dielectrics;Lloyd;J Appl Phys,2005
3. The effect of Cu diffusion on the TDDB behavior in low-k interlevel dielectrics;Lloyd;Microelectron Reliab,2006
4. A comprehensive study of low-k SiCOH TDDB phenomena and its reliability lifetime model development;Chen;IRPS,2006
5. Time dependent dielectric breakdown characteristics of low-k dielectric (SiOC) over a wide range of test areas and electric fields;Kim;IRPS,2007
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13 articles.
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