Qualification of 50V GaN on SiC technology for RF power amplifiers

Author:

Wel P.J. van der,Roedle T.,Lambert B.,Blanck H.,Dammann M.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. van Rijs F. Status and trends of silicon LDMOS base station PA technologies to go beyond 2.5GHz applications. IEEE RWS 2008. p. 69.

2. http://www.semiconductor-today.com/news_items/2011/JUNE/NXP_060611.html.

3. Floriot D, et al. New qualified industrial AlGaN/GaN HEMT process: power performances & reliability figures of merit. In: Proceedings of the 7th European Microwave Integrated Circuits Conference 2012. p. 317–20.

4. Mußer M, et al. GaN power FETs for next generation mobile communication systems. In: Proceedings of the 5th European Microwave Integrated Circuits Conference 2010. p. 9–12.

5. van der Heijden MP, et al. A 19W high-efficiency wide-band CMOS-GaN class-E Chireix RF outphasing power amplifier. MTT-S 2011. p. 1.

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