Reduction of the acquisition time for CMOS time-resolved photon emission by optimized IR detection-Reference-Cited by-同舟云学术

Reduction of the acquisition time for CMOS time-resolved photon emission by optimized IR detection

Published:2006-09 Issue:9-11 Volume:46 Page:1504-1507
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Ispasoiu Radu,Crawford Tom,Johnston Brian,Shaw Chris,Kasapi Steven,Goertz Jason,Rinaudo Olivier,Ouimet Peter

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference7 articles.

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2. Analysis of 0.13um CMOS technology using time resolved light emission;Ouimet;Proc ISTFA,2004

3. Polonsky S. Time-resolved emission spectroscopy of silicon integrated circuits. American Physical Society News, October 2005; online: http://www.aps.org/apsnews/1005/100515.cfm.

4. Time-resolved photon-counting system based on a Geiger-mode InGaAs/InP APD and a solid immersion lens;Vickers;Proc IEEE LEOS,2003

5. Wampler R et al. Dramatic Reduction in Optical Probing Time Via Compression of ATPG-Generated Test Loops, submitted to ITC 2006.

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1. InGaAs/InP avalanche photodiode for infrared single photon detection using a time-to-voltage converter;Optics Communications;2014-10

2. Single Photon Detectors for Ultra Low Voltage Time-Resolved Emission Measurements;IEEE Journal of Quantum Electronics;2011-06

3. Single-photon detectors for ultra-low-voltage time-resolved emission measurements of VLSI circuits;SPIE Proceedings;2011-05-13

4. Evaluating PICA capability for future low voltage SOI chips;2008

5. Advanced backside failure analysis in 65nm CMOS technology;Microelectronics Reliability;2007-09