Author:
Huang Hou-Kuei,Chang Cieh-Pin,Houng Mau-Phon,Wang Yeong-Her
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. X-band InGaP PHEMTs with 70% power-added efficiency;Kao;IEEE MTT-S Int Dig,1998
2. Super low noise InGaP gated PHEMT;Huang;IEEE Electron Dev Lett,2002
3. Noise characteristics of InGaP-gated PHEMTs under high current and thermal accelerated stresses;Huang;IEEE Trans Electron Dev,2005
4. Hot electron degradation of the DC and RF characteristics of AlGaAs/InGaAs/GaAs PHEMT’s;Borgarino;IEEE Trans Electron Dev,1998
5. A comparison of deep level effects on the DC characteristics of InxGa1−xP/In0.20Ga0.80As/GaAs and Al0.24Ga0.76As/In0.20Ga0.80As/GaAs high electron mobility transistors grown by solid source MBE;Yoon;IEEE IPRM Tech Dig,2001
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