Noise Characteristics of InGaP-Gated PHEMTs Under High Current and Thermal Accelerated Stresses-Reference-Cited by-同舟云学术

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Noise Characteristics of InGaP-Gated PHEMTs Under High Current and Thermal Accelerated Stresses

Published:2005-08 Issue:8 Volume:52 Page:1706-1712
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:en
Short-container-title:IEEE Trans. Electron Devices

Author:

Huang H.-K.,Wang C.-S.,Chang C.-P.,Wang Y.-H.,Wu C.-L.,Chang C.-S.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31493/01468358.pdf?arnumber=1468358

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Inverted-Type InAlAs/InAs High-Electron-Mobility Transistor with Liquid Phase Oxidized InAlAs as Gate Insulator;Materials;2021-02-18

2. Fabrication and application of GaAs-on-insulator structure prepared through liquid-phase chemical-enhanced oxidation;Vacuum;2020-01

3. Reduced Subthreshold Characteristics and Flicker Noise of an AlGaAs/InGaAs PHEMT Using Liquid Phase Deposited TiO2 as a Gate Dielectric;Materials;2016-10-25

4. Improved microwave and noise performance of InAlAs/InGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate without gate recess;Applied Physics Letters;2010-05-17

5. Stochastic Stability and Bifurcation Analysis on Hopfield Neural Networks with Noise;Lecture Notes in Computer Science;2010

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