Experimental investigation on the impact of stress free temperature on the electromigration performance of copper dual damascene submicron interconnect

Author:

Roy Arijit,Tan Cher Ming

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Blech IA, Sello H. A study of failure mechanisms in silicon planar epitaxial transistors. In: Shilliday TS, Vaccaro J. editors. Physics of failure in Electronics. Rome Air Development Ctr., 5 (1966) 496–505.

2. Electromigration reliability issues in dual-damascene Cu interconnects;Ogawa;IEEE Trans Relia,2002

3. Investigation of the effect of temperature and stress gradient on aceelerated EM test for Cu narrow interconnects;Tan;Thin Solid Films,2006

4. Current Crowding Effect on Copper Dual Damascene Via Bottom Failure for ULSI Applications;Tan;IEEE Trans Device and Materials Relia,2005

5. Dynamic study of the physical processes in the intrinsic line electromigration deep submicron copper and aluminum interconnects;Tan;IEEE Tans Device and Materials Relia,2004

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