Low frequency noise and technology induced mechanical stress in MOSFETs-Reference-Cited by-同舟云学术

Low frequency noise and technology induced mechanical stress in MOSFETs

Published:2007-08 Issue:8 Volume:47 Page:1218-1221
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Fantini Paolo,Ferrari Giorgio

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference22 articles.

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2. International Technology Roadmap of Semiconductor (ITRS) 2004 Update, http://public.itrs.net/.

3. Scott G, Lutze J, Rubin M, Nouri F, Manley M. In: Proceedings of the international electron device meeting tech. dig., Washington, DC; December 1999. p. 827–30.

4. Deformation Potentials and Mobilities in Non-Polar Crystals

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