Damage threshold determination and non-destructive identification of possible failure sites in PIN limiter

Author:

Tan Cher MingORCID,Yu Wen Zhi

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Koreyasu M, Takashima T, Kashiwa T. X-band PIN diode limiter with low spike leakage performances using re-entrant coaxial cavity. In: 38th European microwave conference (EuMC), IEEE, Piscataway, NJ, USA, 27–31 October 2008. p. 1735–8.

2. Tan RJ, Ward AL, Kaul R. Transient response of PIN limiter diodes, IEEE 1989 MTT-S. In: International microwave symposium digest, IEEE, New York, NY, USA, 13–15 June 1989 (cat. no. 89CH2725-0). p. 1303–6.

3. PIN-limiter diodes effectively protect receivers;Cory,1979

4. Tao X, Xi C, Zhengwei D. The effect of frequency on the thermal effect of high power microwave pulses on a PIN limiter. In: Asia–Pacific symposium on electromagnetic compatibility (APEMC 2010), IEEE, Piscataway, NJ, USA, 12–16 April 2010. p. 401–4.

5. A PIN diode model for finite-element time-domain simulations;Marcondes;J Microw Optoelectron,2009

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