Structure oriented compact model for advanced trench IGBTs without fitting parameters for extreme condition: Part II

Author:

Takaishi J.,Harada S.,Tsukuda M.,Omura I.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Tanaka M, Omura I. Structure oriented compact model for advanced trench IGBTs without fitting parameters for extreme condition: Part I. In: Proc. of 22nd European symposium on the reliability of electron devices, failure physics and analysis, 2011. p. 1933–7.

2. Tanaka M, Omura I. Scaling rule for very shallow trench IGBT toward CMOS process compatibility. In: Proc. of 24th international symposium on power semiconductor devices & IC’s(ISPSD), 2012. p. 177–80.

3. IGBT scaling principle toward CMOS compatible wafer processes;Tanaka;Solid-State Electron,2013

4. Seto K, Imaki H, Takaishi J, Tanaka M, Tsukuda M. Omura I. Sub-micron junction termination for 1200V class devices toward CMOS process compatibility. In: Proc. of 25th international symposium on power semiconductor devices & IC’s(ISPSD), 2013. p. 281–4.

5. Design of ion-implanted MOSFET’s with very small physical dimensions;Dennard;Solid-State Electron,1974

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