IGBT scaling principle toward CMOS compatible wafer processes-Reference-Cited by-同舟云学术

IGBT scaling principle toward CMOS compatible wafer processes

Published:2013-02 Issue: Volume:80 Page:118-123
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Tanaka Masahiro,Omura Ichiro

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. “More-than-Moore” White paper, ITRS; 2010.

2. A 4500V injection enhanced insulated gate bipolar transistor (IEGT) operating in a mode similar to a thyristor;Kitagawa;IEDM Tech Digest,1993

3. Harada M, Minato T, Takahashi H, Nishihara H, Inoue K, Takata I. 600V trench IGBT in comparison with planar IGBT –an evaluation of the limit of IGBT performance-. In: Proceedings of 6th international symposium on power semiconductor devices & IC’s(ISPSD); 1994. p. 411–6.

4. Takeda T, Kuwahara M, Kamata S, Tsunoda T, Imamura K, Nakao S. 1200V trench-gate NPT-IGBT (IEGT) with excellent low on-state voltage. In: Proceedings of 10th international symposium on power semiconductor devices & IC’s(ISPSD); 1998. p. 75–9.

5. Laska T, Pfirsch F, Hirler F, Niedermeyr J, Schaffer C, Schmidt T. 1200V-trench-IGBT study with square short circuit SOA. In: Proceedings of 10th international symposium on power semiconductor devices & IC’s(ISPSD); 1998. p. 433–6.

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of emissivity of a crystal on temperature distribution in a silicon crystal during growth as a function of impurity concentration;Journal of Crystal Growth;2024-08

2. Impact of Scaling on Back-Gate-Controlled IGBT (BC-IGBT);IEEJ Transactions on Electronics, Information and Systems;2024-03-01

3. Study on stress in trench structures during silicon IGBTs process-oxidation;Japanese Journal of Applied Physics;2024-02-14

4. Robust reverse bias safe operating area and improved electrical performance in 3300 V non-proportionally scaled insulated gate bipolar transistors;Japanese Journal of Applied Physics;2024-01-19

5. Analysis and Measurement of the Surge and Gate-Noise Voltages in a 1.7-kV IGBT Module With the Effect of Reverse-Recovery Current;IEEE Transactions on Power Electronics;2023-07