Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference38 articles.
1. Silicon CMOS devices beyond scaling;Haensch;IBM J Res Dev,2006
2. Multiple-gate SOI MOSFETs: device design guidelines;Park;IEEE Trans Electron Devices,2002
3. Harrison S, Coronel P, Cros A, Cerutti R, Leverd F, Beverina A, Wacquez R, Bustos J, Delille D, Tavel B, Barge D, Bienacel J, Samson MP, Martin F, Maitrejean S, Munteanu D, Autran JL, Skotnicki T. Poly-gate replacement through contact hole (PRETCH): a new method for high-k/metal gate and multi-oxide implementation on chip. In: Int. electron devices meeting tech. dig.; December 2004. p. 291–4.
4. Investigation of SOI MOSFETs with ultimate thickness;Ernst;Microelectron Eng,1999
5. Harrison S, Munteanu D, Autran JL, Cros A, Cerutti R, Skotnicki T. Electrical characterization and modelling of high-performance SON DG MOSFETs, In: Proc. European Solid-State Device Research Conference (ESSDERC); 2004. p. 373–376.
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