Author:
Weng Ming-Hung,Chen Chao-Hung,Lin Che-Kai,Huang Shih-Hui,Du Jhih-Han,Peng Sheng-Wen,Wohlmuth Walter,Chou Frank Yung-Shi,Hua Chang-Hwang
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. Weng MH, Lin CK, Du JH, Wang WC, Wang WK, Wohlmuth W. Pure play GaN foundry 0.25μm HEMT TECHNOLOGY for RF applications. In: IEEE CSIC symposium, Monterey California, USA, Oct 2013.
2. Wohlmuth W, Weng MH, Lin CK, Du JH, Ho SY, Chou TY, et al. AlGaN/GaN HEMT development targeted for X-band applications. In: IEEE COMCAS, Israel, Oct 2013.
3. Wang WC, Chen CH, Du JH, Weng MH, Lin CK, Huang CC, et al. Development and control of a 0.25μm gate process module for AlGaN/GaN HEMT Production. In: CS MANTECH conference, New Orleans, Louisiana, USA, May 2013.
4. van der Wel PJ, de Beer JR, van Boxtel RJM, Hsieh YY, Wang YC. Reliability assessment of extrinsic defects in sinx metal–insulator–metal capacitors. In: Reliability of compound semiconductors workshop, San Antonio, Texas, November 2006. p. 35–40.
5. Future RF market opportunities for GaN;Hindle;Microw J,2012