Electro- and thermomigration induced Cu3Sn and Cu6Sn5 formation in SnAg3.0Cu0.5 bumps

Author:

Meinshausen L.,Frémont H.,Weide-Zaage K.,Plano Bernard

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference35 articles.

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3. Reliability challenges in 3D IC packaging technology

4. Ohara Y, Noriki A, Sakuma K. 10μm fine pitch Cu/Sn micro-bumps for 3-D super-chip stack. IEEE. In: Proceedings of the 2nd international 3D system integration (3DIC). San Francisco, USA; 2009. p.1–6 [28–30 September].

5. Labie R, Limaye P, Lee KW, Berry CJ, Beyne E, De Wolf I, Reliability testing of Cu–Sn intermetallic micro-bump interconnections for 3D-device stacking. In: IEEE, proceedings of the Electronics-System-Integration-Conference (ESTC), Berlin, Germany, 13–16 September 2010. p. 1–5.

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