Author:
Beckx S.,Demand M.,Locorotondo S.,Henson K.,Claes M.,Paraschiv V.,Shamiryan D.,Jaenen P.,Boullart W.,Degendt S.,Biesemans S.,Vanhaelemeersch S.,Vertommen J.,Coenegrachts B.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference4 articles.
1. Effect of postdeposition anneal conditions on defect density of HfO2 layers measured by wet etching;Claes;J Electrochem Soc,2004
2. Reduction of silicon recess caused by plasma oxidation during high-density plasma polysilicon gate etching;Vitale;J Vac Sci Technol B,2003
3. Henson K, Lander BR, Demand M, Dachs C, Kaczer B, Deweerd W, et al. NMOS transistors with metal gate on thin SiON driving 1550μA/μm at 1.3V and off-state of 70nA/μm. IEDM, San Francisco, CA, p. 851–854, Dec 13–15, 2004
4. Collaert N, Henson K, Demand M, Goodwin M, Brus S, Rooyackers R, et al. NMOS and PMOS triple gate devices with mid-gap metal gate on oxynitride and Hf based gate dielectrics. VLSI-TSA-TECH, submitted for publication
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