Author:
Arabi M.,Federspiel X.,Cacho F.,Rafik M.,Nguyen A.-P.,Garros X.,Ghibaudo G.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Influence of frequency dependent time to breakdown on high-k/metal gate reliability;Knebel;IEEE Trans. Electron Devices,2013
2. The physical mechanism investigation of AC TDDB behavior in advanced gate stackX;Chen,2014
3. The impacts of inverter-like transitions on AC TDDB in a fast switching logic circuit;Yew,2014
4. New insights about oxide breakdown occurrence at circuit level;Saliva,2014
5. Frequency dependent TDDB behaviors and its reliability qualification in 32nm high-k/metal gate CMOSFETs;Lee,2011
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