Author:
Pugalenthi Karkulali,Park Hyunseok,Raghavan Nagarajan
Funder
SUTD
MOE
National Research Foundation Singapore
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. Towards Prognostics of Power MOSFETs: Accelerated Aging and Precursors of Failure;Celaya,2010
2. Identification of failure precursor parameters for insulated gate bipolar transistors (IGBTs);Patil,2008
3. Remaining useful lifetime estimation for thermally stressed power MOSFETs based on ON-state resistance variation;Dusmez;IEEE Trans. Ind. Appl.,2016
4. Remaining useful lifetime estimation for power MOSFETs under thermal stress with RANSAC outlier removal;Dusmez;IEEE Transactions on Industrial Informatics,2017
5. Prognostics of power MOSFETs under thermal stress accelerated aging using data-driven and model-based methodologies;Celaya,2011
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18 articles.
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