Heavy ion irradiation effects on GaN/AlGaN high electron mobility transistor failure at off-state-Reference-Cited by-同舟云学术

Heavy ion irradiation effects on GaN/AlGaN high electron mobility transistor failure at off-state

Published:2019-11 Issue: Volume:102 Page:113493
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Islam Zahabul,Paoletta Angela L.,Monterrosa Anthony M.,Schuler Jennifer D.,Rupert Timothy J.,Hattar Khalid,Glavin Nicholas,Haque Aman

Funder

Air Force Office of Scientific Research

U.S. Department of Energy

National Science Foundation

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference38 articles.

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4. Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs;Moens,2015

5. Testing the temperature limits of GaN-based HEMT devices;Maier;IEEE Trans. Device Mater. Reliab.,2010

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