Effect of oxide-trapped charge on the anomalous drain avalanche hot carrier degradation of a SiO2 dielectric nMOSFET

Author:

Yun Yeohyeok,Seo Ji-Hoon,Kwon Young-Kyu,Kang Bongkoo

Funder

ICT Consilience Creative Program

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Hot-carrier Reliability of MOS VLSI Circuits;Leblebici,2012

2. Mosfet Degradation Due to NBTI and HCI and its Implications for Reliability-aware VLSI Design;Kufluoglu,2007

3. Characterization and Modeling of Hot-carrier Degradation in Sub-micron NMOSFETS;Pagey,2002

4. AC versus DC hot-carrier degradation in n-channel MOSFETs;Mistry;IEEE Transactions on Electron Devices,1993

5. New hot-carrier injection and device degradation in submicron MOSFETs;Takeda;IEE Proceedings I (Solid-State and Electron Devices),1983

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1. Capacitance-Voltage Method for Detecting the local oxide trapped charge in SOI FinFET;2022 International Conference on Information Science and Communications Technologies (ICISCT);2022-09-28

2. Capacitance Method for Identifying Degradation due to Electrical Stress in MOSFETs;e-Journal of Surface Science and Nanotechnology;2022-07-07

3. Anomalous NMOSFET hot carrier degradation on DRAM;2021 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA);2021-11-24

4. Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection;Applied Sciences;2020-11-09

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