Promoting of charged-device model/electrostatic discharge immunity in the dicing saw process-Reference-Cited by-同舟云学术

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Promoting of charged-device model/electrostatic discharge immunity in the dicing saw process

Published:2010-06 Issue:6 Volume:50 Page:839-846
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Wang Mu-Chun,Liu Chuan-Hsi,Huang Kuo-Shu,Hsieh Zhen-Ying,Chen Shuang-Yuan,Yang Hsin-Chia,Lin Chii-Ruey

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Characterization of various stress-induced oxide traps in MOSFET's by using a subthreshold transient current technique

2. Direct-current measurements of oxide and interface traps on oxidized silicon

3. Characterization of oxide trap and interface trap creation during hot-carrier stressing of n-MOS transistors using the floating-gate technique

4. Junction capacitance reduction due to self-aligned pocket implantation in elevated source/drain NMOSFETs

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