Improvement of high-voltage junction termination extension (JTE) by an optimized profile of lateral doping (VLD)-Reference-Cited by-同舟云学术

Improvement of high-voltage junction termination extension (JTE) by an optimized profile of lateral doping (VLD)

Published:2010-09 Issue:9-11 Volume:50 Page:1773-1777
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Ronsisvalle C.,Enea V.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference7 articles.

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4. Power semiconductor devices;Baliga,1996

5. Optimization and surface charge sensitivity of high-voltage blocking structures with shallow junctions;Yilmaz;IEEE Trans Electron Dev,1991

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