Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness-Reference-Cited by-同舟云学术

Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness

Published:2010-03 Issue:3 Volume:50 Page:332-337
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Kobayashi Yusuke,Kakushima Kuniyuki,Ahmet Parhat,Ramgopal Rao V.,Tsutsui Kazuo,Iwai Hiroshi

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference12 articles.

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2. Park T, Choi S, Lee DH, Yoo JR, Lee BC, Lee CG, et al. Fabrication of body-tied double-gate MOSFETs (Omega MOSFETs) using bulk Si wafers. In: Symp VLSI tech; June 2003. p. 135–46.

3. Choi YK, Lindert N, Xuan P, Tang S, Daewon H, Anderson E, et al. Sub-20nm CMOS FinFET technologies. In: IEDM tech dig; December 2001. p. 421–4.

4. Cho HJ, Choe JD, Li M, Kim JY, Chung SH, Oh CW, et al. Fin width scaling criteria of body-tied FinFET in sub-50nm regime. In: Tech dig dev res conf; 2001. p. 26–7.

5. Yang FL, Lee EH, Chen HY, Chang CY, Liu SD, Huang CC, et al. 5nm gate nanowire FinFET. In: Symp VLSI tech; June 2004. p. 196–7.

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