Author:
Rezzak Nadia,Alles Michael L.,Schrimpf Ronald D.,Kalemeris Sarah,Massengill Lloyd W.,Sochacki John,Barnaby Hugh J.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Lacoe RC. The effects of total ionizing dose irradiation on CMOS technology and the use of design techniques to mitigate total dose effects. In: Proc int reliability physics symp; 2002. p. 376.
2. Nonuniform total-dose-induced charge distribution in shallow-trench isolation oxides;Turowski;IEEE Trans Nucl Sci,2004
3. Challenges in hardening technologies using shallow-trench isolation;Shaneyfelt;IEEE Trans Nucl Sci,1998
4. A variable-size shallow trench isolation (STI) technology with diffused sidewall doping for submicron CMOS;Davari;IEDM Technol Dig,1998
5. Radiation hardened shallow trench isolation;Brady;IEEE Trans Nucl Sci,1999
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