IGBT RBSOA non-destructive testing methods: Analysis and discussion-Reference-Cited by-同舟云学术

IGBT RBSOA non-destructive testing methods: Analysis and discussion

Published:2010-09 Issue:9-11 Volume:50 Page:1731-1737
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Abbate Carmine,Busatto Giovanni,Iannuzzo Francesco

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference8 articles.

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2. An 1800-V 300-A nondestructive tester for bipolar power transistors;Carpenter;IEEE Trans Power Electron,1990

3. Reinmuth K. A method for nondestructive testing of bipolar transistors, IGBTs and MOSFETs. In: EPE-MADEP ’91; 1991. p. 142–7.

4. Non-destructive RBSOA characterization of IGBT’s and MCT’s;Chen;IEEE Trans Power Electron,1995

5. Non-destructive high temperature characterisation of high voltage IGBTs;Busatto;Microelectron Reliab,2002

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