High voltage degradation of GaN High Electron Mobility Transistors on silicon substrate-Reference-Cited by-同舟云学术

High voltage degradation of GaN High Electron Mobility Transistors on silicon substrate

Published:2010-06 Issue:6 Volume:50 Page:758-762
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Demirtas Sefa,Joh Jungwoo,Alamo Jesús A. del

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference25 articles.

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4. Hikita M, Yanagihara M, Nakazawa K, Ueno H, Hirose Y, Ueda T, et al. In: Inter elect dev meet; 2004. p. 803–6.

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