Failure analysis on 14 nm FinFET devices with ESD CDM failure-Reference-Cited by-同舟云学术

Failure analysis on 14 nm FinFET devices with ESD CDM failure

Published:2018-09 Issue: Volume:88-90 Page:321-333
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Shaalini C.,Tan P.K.,Zhao Y.Z.,Liu B.H.,Ma Y.Z.,Quah A.,Pan Y.L.,Tan H.,Mai Z.H.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference6 articles.

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4. Comparison of Active and Passive Voltage Contrast for Failure Localization;Rosenkranz,2007

5. High Resolution Electron Beam Induced Resistance Change for Fault Isolation with 100 nm2 Localization;Buchea,2015

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