Physics-based modeling of TID induced global static leakage in different CMOS circuits-Reference-Cited by-同舟云学术

Physics-based modeling of TID induced global static leakage in different CMOS circuits

Published:2018-05 Issue: Volume:84 Page:181-186
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Zebrev Gennady I.^ORCID,Orlov Vasily V.,Gorbunov Maxim S.,Drosdetsky Maxim G.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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4. Challenges in hardening technologies using shallow-trench isolation;Shaneyfelt;IEEE Trans. Nucl. Sci.,1998

5. Optimizing Radiation Hard Design SRAM Cells;Clark;IEEE Trans. Nucl. Sci.,2007

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