Author:
Diaz Reigosa Paula,Schulz Nicola,Minamisawa Renato
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. X. Huang, L. Vursin, A. Bhalla, W. Simon, and J. C. Dries,“Design and fabrication of 3.3 kV SiC MOSFETs for industrial applications,” in Proc. of ISPSD, May 2017, pp. 255–258.
2. Performance evaluation and expected challenges of silicon carbide power MOSFETs for high voltage applications;Rahimo,2016
3. R. A. Minamisawa and L. Knoll, “Short channel trench power MOSFET,” U.S. Patent 20190035928, Oct. 2018.
4. A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis;Ceccarelli;Microelectron. Reliab.,2017
5. A short-circuit safe operation area identification criterion for SiC MOSFET power modules;Reigosa;IEEE Trans. Ind. Appl.,2017
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