Accurate determination of the peak channel temperature by an electrical method combined with EL mapping technique in In0.17Al0.83N/GaN HEMTs

Author:

Chen Leilei,Yan Xiaohong,Li Weiran,Huang Yi,Yan Dawei,Gu Xiaofeng

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. High-performance microwave gate-recessed AlGaN/AlN/GaN MOS-HEMT with 73% power-added efficiency;Hao;IEEE Electron. Device Lett.,2011

2. High-power AlGaN/GaN HEMTs for ka-band applications;Palacios;IEEE Electron. Device Lett.,2005

3. Surface barrier height lowering at above 540 K in AlInN/AlN/GaN heterostructures;Hasan;Appl. Phys. Lett.,2011

4. A thermal model for static current characteristics of AlGaN∕GaN high electron mobility transistors including self-heating effect;Chang;J. Appl. Phys.,2006

5. Thermal effects analysis of GaN HEMT power amplifier based on LTCC substrate integration;Jebali,2018

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A time to failure evaluation of AlGaN/GaN HEMT transistors for RF applications;e-Prime - Advances in Electrical Engineering, Electronics and Energy;2022

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