A time to failure evaluation of AlGaN/GaN HEMT transistors for RF applications
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,General Engineering,Energy Engineering and Power Technology
Reference11 articles.
1. Scaling DC lifetests on GaN HEMT to RF conditions;Paine;Microelectron. Reliab.,2015
2. Lifetesting GaN HEMTs with multiple degradation mechanisms;Paine;IEEE Trans. Device Mater. Reliab.,2015
3. Recent progress of physical failure analysis of GaN HEMTs;Cai;J. Semicond.,2021
4. Operating channel temperature in GaN HEMTs: DC versus RF accelerated life testing;Pomeroy;Microelectron. Reliab.,2015
5. Effective temperature measurements of AlGaN/GaN-based HEMT under various load lines using micro-Raman technique;Kim;Solid State Electron.,2006
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Precise channel temperature prediction in AlGaN/GaN HEMTs via closed-form empirical expression;Solid-State Electronics;2023-12
2. Photovoltaic Class‐E Inverter for Resonance Wireless Power Transfer for Electric Vehicle Charging Applications with Optimization Algorithms;Energy Technology;2023-07-11
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