Author:
Halouani A.,Khatir Z.,Lallemand R.,Ibrahim A.,Ouhab M.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference22 articles.
1. Analysis of the aging mechanism occurring at the bond-wire contact of IGBT power devices during power cycling;Dornic;Microelectron. Reliab.,2020
2. Thermal and structural simulation techniques for estimating fatigue life of an IGBT module;Sasaki,2008
3. Strategy for designing accelerated aging tests to evaluate IGBT power modules lifetime in real operation mode;Thebaud;IEEE Trans. Components Packaging Technol.,2003
4. Reliability of power cycling for IGBT power semiconductor modules;Morozumi;IEEE Trans. Industry Appl.,2003
5. Reliability of power cycling for IGBT power semiconductor modules;Morozumi,2001