Author:
Zhao D.,Letz S.,Leib J.,Schletz A.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference26 articles.
1. Silicon Carbide - Materials;Mukherjee,2011
2. Review of silicon carbide power devices and their applications;She;IEEE Trans. Ind. Electron.,2017
3. ECPE Guideline AQG 324: Qualification of Power Modules for Use in Power Electronics Converter Units in Motor Vehicles;ECPE,2021
4. Power cycling issues and challenges of SiC-MOSFET power modules in high temperature conditions;Ibrahim;Microelectron. Reliab.,2016
5. C. Herold, J. Sun, P. Seidel, L. Tinschert, J. Lutz, 2017, Power cycling methods for SiC MOSFETs, in: 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), Sapporo, Japan, IEEE, 28.05.2017–01.06.2017, pp. 367–370.