BTI saturation and universal relaxation in SiC power MOSFETs-Reference-Cited by-同舟云学术

BTI saturation and universal relaxation in SiC power MOSFETs

Published:2020-06 Issue: Volume:109 Page:113642
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Sánchez Luis,Acurio Eliana,Crupi Felice,Reggiani Susanna,Meneghesso Gaudenzio

Funder

ECSEL

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Fundamentals of Silicon Carbide Technology;Kimoto,2014

2. Measurement considerations for evaluating BTI effects in SiC MOSFETs;Habersat;Microelectron. Reliab.,2018

3. Understanding BTI in SiC MOSFETs and its impact on circuit operation;Puschkarsky;IEEE Trans. Device Mater. Reliab.,2018

4. A novel non-intrusive technique for BTI characterization in SiC mosfets;Gonzalez;IEEE Trans. Power Electron.,2019

5. Threshold voltage instability in SiC power MOSFETs;Consentino,2019

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1. A modelling method of the on-state resistance of p-channel power MOSFETs under NBTI stress;Microelectronics Reliability;2023-11

2. Investigation of Positive Bias Temperature Instability of 4H-SiC MOS Capacitors and Deep Interface States Extraction at 300°C;2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia);2023-08-27

3. Categorization of PBTI Mechanisms on 4H-SiC MOSFETs by the Stress Gate Voltage and Channel Plane Orientation;IEEE Transactions on Device and Materials Reliability;2023-03

4. Fabrication and Detection of Silicon Carbide Color Centers Based on Nanosecond Laser Technology;Journal of Russian Laser Research;2022-11

5. Threshold-voltage bias-instability in SiC MOSFETs: effects of stress temperature and level on oxide charge buildup and recovery;Semiconductor Science and Technology;2022-06-06