Study of process induced variability of germanium-pTFET in analog and RF domain-Reference-Cited by-同舟云学术

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Study of process induced variability of germanium-pTFET in analog and RF domain

Published:2016-10 Issue: Volume:65 Page:47-54
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Ghosh Sayani,Koley Kalyan,Sarkar Chandan K.

Funder

Department of Science and Technology (DST)

Council for scientific and Industrial Research (CSIR)

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Steep subthreshold slope n- and p-type tunnel-FET devices for low-power and energy-efficient digital circuits;Khatami;IEEE Trans. Electron. Devices,2009

2. Tunneling field effect transistors (TFETs) with subthreshold swing (SS) less than 60mV/dec;Choi;IEEE Electron. Device Letters,2007

3. Double gate tunnel FET with high-κ gate dielectric;Boucart;IEEE Trans. Electron. Devices,2007

4. Silicide engineering to boost Si tunnel transistor drive current;Leonelli;Jpn. J. Appl. Phys.,2011

5. Germanium–tin p-channel tunneling field-effect transistor: device design and technology demonstration;Yang;IEEE Trans. Electron. Devices,2013

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