Field returns, a source of natural failure mechanisms-Reference-Cited by-同舟云学术

Field returns, a source of natural failure mechanisms

Published:2007-08 Issue:8 Volume:47 Page:1156-1165
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Roesch William J.,Brockett Steve

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Roesch Bill, Rubalcava AL, Winters RA. GaAs IC reliability returns: a story of abuse. In: GaAs REL Workshop, October 4, 1992, Miami Beach, Florida. p. 30–4.

2. Roesch Bill. Reliability of compound semiconductor historical review. In: Reliability of compound semiconductors workshop, October 30, 2005, Palm Springs, CA. p 1–16.

3. Shen Nien-Tsu. Perfect quality for free?!? In: Compound semiconductor Mantech conference, April 26, 2006, Vancouver BC, Canada. p. 75–8.

4. Roesch Bill. Volume & quality impacts on reliability: a new game for GaAs. In: GaAs REL workshop, November 5, 2000, Seattle, Washington. p. 137–45.

5. Roesch Bill. Reliability, beyond the basics. In: Tutorial presentation, compound semiconductor Mantech conference, April 26, 2006, Vancouver BC, Canada.

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