Experimental and numerical analysis of current flow homogeneity in low voltage SOI multi-finger gg-NMOS and NPN ESD protection devices

Author:

Heer M.,Bychikhin S.,Mamanee W.,Pogany D.,Heid A.,Grombach P.,Klaussner M.,Soppa W.,Ramler B.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. ESD in silicon integrated circuits;Amerasekera,1995

2. Duvvury C, Diaz C, Haddock T. Achieving uniform nMOS device power distribution for sub-micron ESD reliability. In: Proc IEDM. 1992. p. 131–4.

3. Keppens B, Wybo G, Vermont G, Van Camp B. Concept for body coupling in SOI MOS transistors to improve multi-finger triggering. In: Proc EOS/ESD symp. USA; 2006. p. 172–8.

4. Graf M, Dudek V, Soppa W, Wolf H, Bychikhin S, Pogany D, et al. Impact of layer thickness variations of SOI-wafer on ESD robustness. In: Proc EOS/ESD symp. USA; 2003. p. 116–21.

5. Electro-thermal short pulsed simulation for SOI technology;Entringer;Microelectron Reliab,2006

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