The impact on power semiconductor device operation due to local electric field alterations in the planar junction termination-Reference-Cited by-同舟云学术

The impact on power semiconductor device operation due to local electric field alterations in the planar junction termination

Published:2016-03 Issue: Volume:58 Page:51-57
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Rahimo Munaf,Richter Frank,Fischer Fabian,Vemulapati Umamaheswara,Kopta Arnost,Corvasce Chiara,Geissmann Silvan,Bellini Marco,Bayer Martin,Bauer Friedhelm

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Power Semiconductors;Linder,2006

2. Fundamentals of Power Semiconductor Devices;Baliga,2008

3. Control of electric field at the surface of P–N junctions;Davies;IEEE Trans. Electron Devices,1964

4. Breakdown voltage optimization of silicon p–π–v planar junction diodes;Kyuwoon;IEEE Trans. Electron Devices,1984

5. Multiple-zone single-mask junction termination extension—a high-yield near-ideal breakdown voltage technology;Tantraporn;IEEE Trans. Electron Devices,1987

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